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Elpida Says Dual-Gate DDR-3 Is Twice as Fast as DDR-2 Volume Shipments in 2006Elpida Memory Inc. has announced the development of 512-megabit DDR-3 SDRAM modules, which will offer desktops, notebooks, and servers double the speed of the DDR-2 memory now in volume production. The modules incorporate dual-gate transistor technology, which suppresses unwanted leakage current to deliver higher speeds at lower voltages -- an invention recently seen in high-performance processors, but never before in a DRAM device. According to Elpida, this 90-nanometer-process memory can achieve high-speed data transfer of up to 1333Mbps while consuming just 1.5 volts, versus the 1.8 volts of DDR-2 today. A newly introduced automatic calibration feature for the output buffer helps control the system timing budget during variations in voltage and temperature. The company says it will ship customer samples of the 512Mbit DDR-3 by the end of this year, with initial production -- and higher-density modules such as 1Gbit and 2Gbit -- coming in 2006.
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